- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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373
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 217 W | Single | 1200 V | 2.7 V | 30 A | 600 nA | 20 V | ||||
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795
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 FP | + 175 C | Tube | 30 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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200
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 259 W | Single | 1.2 kV | 1.55 V | 30 A | 250 nA | +/- 20 V | ||||
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4,160
In-stock
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Fairchild Semiconductor | IGBT Transistors FORECAST FG | Through Hole | TO-3PN-3 | + 175 C | Tube | 136 W | Single | 1250 V | 2.72 V | 30 A | 500 nA | 25 V | ||||
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274
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 | + 175 C | Tube | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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552
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 105 W | Single | 650 V | 1.95 V | 30 A | 100 nA | 20 V | ||||
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240
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 217 W | Single | 1200 V | 2.7 V | 30 A | 600 nA | 20 V | ||||
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274
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 105 W | Single | 650 V | 1.9 V | 30 A | 100 nA | 20 V | ||||
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165
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 259 W | Single | 1.2 kV | 1.55 V | 30 A | 250 nA | +/- 20 V | ||||
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3,000
In-stock
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 254 W | Single | 1200 V | 1.8 V | 30 A | 100 nA | 6.4 V | ||||
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163
In-stock
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onsemi | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 278 W | Single | 1.2 kV | 2.1 V | 30 A | 100 nA | +/- 20 V | ||||
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420
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V, 15A, Field Stop Trench IGBT | Through Hole | TO-247G03-3 | + 175 C | Tube | 333 W | Single | 1200 V | 1.9 V | 30 A | 400 nA | + /- 25 V | ||||
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3,000
In-stock
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 254 W | Single | 1200 V | 1.8 V | 30 A | 100 nA | 6.4 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 283 W | Single | 1200 V | 1.85 V | 30 A | 250 nA | 20 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 283 W | Single | 1200 V | 1.85 V | 30 A | 250 nA | 20 V | ||||
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2,000
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 259 W | Single | 1200 V | 2.1 V | 30 A | 250 nA | 20 V | ||||
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514
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 260 W | Single | 650 V | 1.75 V | 30 A | 250 nA | +/- 20 V | ||||
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398
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 259 W | Single | 1200 V | 2.1 V | 30 A | 250 nA | 20 V | ||||
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376
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 260 W | Single | 650 V | 1.75 V | 30 A | 250 nA | +/- 20 V |