IGBT Transistors - Kaimeite

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3 products

PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IHW15N120R3	1+ $2.000 10+ $2.000 100+ $2.000 250+ $1.000	PDF RFQ	3,000 In-stock	Infineon Technologies	IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body	Through Hole	TO-247-3	+ 175 C	Tube	254 W	Single	1200 V	1.8 V	30 A	100 nA	6.4 V
NGTB15N120IHWG	1+ $3.180 10+ $2.700 100+ $2.350 250+ $2.230	PDF RFQ	163 In-stock	onsemi	IGBT Transistors LC IH RC OSV	Through Hole	TO-247-3	+ 175 C	Tube	278 W	Single	1.2 kV	2.1 V	30 A	100 nA	+/- 20 V
IHW15N120R3FKSA1	1+ $2.000 10+ $2.000 100+ $2.000 250+ $1.000	PDF RFQ	3,000 In-stock	Infineon Technologies	IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body	Through Hole	TO-247-3	+ 175 C	Tube	254 W	Single	1200 V	1.8 V	30 A	100 nA	6.4 V