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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGP15M65DF2
1+
$2.030
10+
$1.730
100+
$1.380
500+
$1.210
RFQ
956
In-stock
STMicroelectronics IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A ... Through Hole TO-220-3 + 175 C   136 W Single 650 V 1.55 V 30 A + / - 250 uA +/- 20 V
STGP15H60DF
1+
$2.030
10+
$1.730
100+
$1.380
500+
$1.210
RFQ
274
In-stock
STMicroelectronics IGBT Transistors Trench gate H series 600V 15A HiSpd Through Hole TO-220-3 + 175 C Tube 115 W Single 600 V 1.6 V 30 A 250 nA +/- 20 V
IKP15N65H5XKSA1
1+
$2.210
10+
$1.880
100+
$1.500
500+
$1.320
RFQ
552
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-220-3 + 175 C Tube 105 W Single 650 V 1.95 V 30 A 100 nA 20 V
IKP15N65F5XKSA1
1+
$2.210
10+
$1.880
100+
$1.500
500+
$1.320
RFQ
274
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-220-3 + 175 C Tube 105 W Single 650 V 1.9 V 30 A 100 nA 20 V
IKP15N65H5
500+
$1.320
1000+
$1.090
2500+
$1.020
5000+
$0.976
VIEW
RFQ
Infineon Technologies IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... Through Hole TO-220-3 + 175 C   105 W Single 650 V 1.95 V 30 A 100 nA 20 V
IKP15N65F5
500+
$1.320
1000+
$1.090
2500+
$1.020
5000+
$0.976
VIEW
RFQ
Infineon Technologies IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... Through Hole TO-220-3 + 175 C   105 W Single 650 V 1.9 V 30 A 100 nA 20 V
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