- Manufacture :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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956
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A ... | Through Hole | TO-220-3 | + 175 C | 136 W | Single | 650 V | 1.55 V | 30 A | + / - 250 uA | +/- 20 V | |||||
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274
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 | + 175 C | Tube | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | ||||
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552
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 105 W | Single | 650 V | 1.95 V | 30 A | 100 nA | 20 V | ||||
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274
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-220-3 | + 175 C | Tube | 105 W | Single | 650 V | 1.9 V | 30 A | 100 nA | 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... | Through Hole | TO-220-3 | + 175 C | 105 W | Single | 650 V | 1.95 V | 30 A | 100 nA | 20 V | |||||
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VIEW | Infineon Technologies | IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... | Through Hole | TO-220-3 | + 175 C | 105 W | Single | 650 V | 1.9 V | 30 A | 100 nA | 20 V |