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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXBK55N300
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RFQ
166
In-stock
IXYS IGBT Transistors Through Hole TO-264-3 + 150 C Tube 625 W Single 3 kV 2.7 V 130 A +/- 200 nA +/- 25 V
IXYA50N65C3
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RFQ
247
In-stock
IXYS IGBT Transistors 650V/130A XPT C3-Class TO-263 SMD/SMT TO-263-2 + 175 C Tube 600 W Single 650 V 2.1 V 130 A 100 nA 30 V
IXYH50N65C3H1
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RFQ
60
In-stock
IXYS IGBT Transistors 650V/130A XPTI C3-Class TO-247 Through Hole TO-247-3 + 175 C Tube 600 W Single 650 V 1.74 V 130 A 100 nA 30 V
IXYP50N65C3
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RFQ
99
In-stock
IXYS IGBT Transistors 650V/130A XPT C3-Class TO-220 Through Hole TO-220-3 + 175 C Tube 600 W Single 650 V 1.74 V 130 A 100 nA 30 V
IXYH50N65C3
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RFQ
27
In-stock
IXYS IGBT Transistors 650V/130A XPT C3-Class TO-247 Through Hole TO-247-3 + 175 C Tube 600 W Single 650 V 1.74 V 130 A 100 nA 30 V
IRG7PH46UPBF
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RFQ
85
In-stock
IR / Infineon IGBT Transistors 1200V 108A Through Hole TO-247-3 + 175 C Tube 469 W Single 1.2 kV 1.7 V 130 A 200 nA +/- 30 V
IRG7PH46U-EP
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RFQ
100
In-stock
IR / Infineon IGBT Transistors IGBT DISCRETES Through Hole TO-247-3 + 175 C Tube 469 W Single 1.2 kV 2.1 V 130 A +/- 200 nA +/- 30 V
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