IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRG4IBC20WPBF	1+ $2.060 10+ $1.750 100+ $1.400 500+ $1.230		PDF RFQ	834 In-stock	Infineon Technologies	IGBT Transistors 600V Warp 60-150kHz	Through Hole	TO-220FP-3	+ 150 C	Tube	34 W	Single	600 V	2.16 V	12 A	100 nA	+/- 20 V
	IXGH6N170	1+ $10.000 10+ $9.040 25+ $8.620 100+ $7.480		PDF RFQ	20 In-stock	IXYS	IGBT Transistors 12 Amps 1700 V 4 V Rds	Through Hole	TO-247-3	+ 150 C	Tube	75 W	Single	1.7 kV	3 V	12 A	100 nA	+/- 20 V

IRG4IBC20WPBF

IRG4IBC20WPBF

Infineon Technologies

IGBT Transistors 600V Warp 60-150kHz

Stock : 834

1+: $2.060

10+: $1.750

100+: $1.400

500+: $1.230

IXGH6N170

IXGH6N170

IXYS

IGBT Transistors 12 Amps 1700 V 4 V Rds

Stock : 20

1+: $10.000

10+: $9.040

25+: $8.620

100+: $7.480

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