IGBT Transistors - Kaimeite

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7 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	STGD6M65DF2		GET PRICE	PDF RFQ	1,950 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 6 A l...	SMD/SMT	DPAK-3	+ 175 C	Reel	88 W	Single	650 V	1.55 V	12 A	+/- 250 uA	+/- 20 V
	IKB06N60T		GET PRICE	PDF RFQ	931 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS DuoPack 600V 6A	Through Hole	TO-263-3	+ 175 C	Reel	88 W	Single	600 V	1.8 V	12 A	100 nA	20 V
	STGP6M65DF2		GET PRICE	PDF RFQ	2,000 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A lo...	Through Hole	TO-220-3	+ 175 C		88 W	Single	650 V	1.55 V	12 A	+/- 250 uA	+/- 20 V
	IGP06N60T		GET PRICE	PDF RFQ	224 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS DuoPack 600V 6A	Through Hole	TO-220-3	+ 175 C	Tube	88 W	Single	600 V	1.8 V	12 A	100 nA	20 V
	IKB06N60TATMA1		GET PRICE	PDF RFQ	1,000 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS DuoPack 600V 6A	Through Hole	TO-263-3	+ 175 C	Reel	88 W	Single	600 V	1.8 V	12 A	100 nA	20 V
	STGB6M65DF2		GET PRICE	PDF RFQ	2,000 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A lo...	SMD/SMT	D2PAK-3	+ 175 C		88 W	Single	650 V	1.55 V	12 A	+/- 250 uA	+/- 20 V
	IGP06N60TXKSA1		GET PRICE	PDF RFQ	500 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS DuoPack 600V 6A	Through Hole	TO-220-3	+ 175 C	Tube	88 W	Single	600 V	1.8 V	12 A	100 nA	20 V

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