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Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
G30T60
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RFQ
12,500
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 200 W Single 600 V 1.6 V 53 A 100 nA +/- 20 V
IKW30N60DTPXKSA1
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RFQ
61
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 200 W Single 600 V 1.6 V 53 A 100 nA +/- 20 V
IRGP6640D-EPBF
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RFQ
151
In-stock
IR / Infineon IGBT Transistors 600V UltraFast IGBT TO-247 Through Hole TO-247AD-3 + 175 C Tube 200 W Single 600 V 1.65 V 53 A 100 nA 20 V
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