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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGB14C40LPBF
1+
$2.000
10+
$1.600
100+
$1.200
1000+
$0.900
RFQ
40,000
In-stock
Infineon Technologies IGBT Transistors 430V LO-VCEON DISCRETE IGBT Through Hole TO-220-3 + 150 C Tube 125 W Single 430 V 1.4 V 20 A   10 V
STGP10NB60S
1+
$1.830
10+
$1.550
100+
$1.240
500+
$1.090
RFQ
604
In-stock
STMicroelectronics IGBT Transistors N-Ch 600 Volt 10 Amp Through Hole TO-220-3 + 150 C Tube 80 W Single 600 V 1.7 V 20 A +/- 100 nA +/- 20 V
STGP10H60DF
1+
$1.880
10+
$1.590
100+
$1.280
500+
$1.120
RFQ
576
In-stock
STMicroelectronics IGBT Transistors Trench gate H series 600V 10A HiSpd Through Hole TO-220-3 + 175 C Tube 115 W Single 600 V 1.5 V 20 A 250 nA +/- 20 V
IXA12IF1200PB
1+
$4.370
10+
$3.720
100+
$3.220
250+
$3.060
RFQ
180
In-stock
IXYS IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT Through Hole TO-220-3 + 150 C Tube 85 W Single 1200 V 1.8 V 20 A 500 nA 20 V
IXYP8N90C3
1+
$2.650
10+
$2.250
100+
$1.960
250+
$1.860
VIEW
RFQ
IXYS IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT Through Hole TO-220-3 + 175 C Tube 125 W Single 900 V 2.15 V 20 A 100 nA 30 V
IXYP8N90C3D1
1+
$3.630
10+
$3.090
100+
$2.680
250+
$2.540
VIEW
RFQ
IXYS IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs Through Hole TO-220-3 + 175 C Tube 125 W Single 900 V 2.15 V 20 A 100 nA 30 V
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