- Manufacture :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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40,000
In-stock
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Infineon Technologies | IGBT Transistors 430V LO-VCEON DISCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 125 W | Single | 430 V | 1.4 V | 20 A | 10 V | |||||
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604
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 10 Amp | Through Hole | TO-220-3 | + 150 C | Tube | 80 W | Single | 600 V | 1.7 V | 20 A | +/- 100 nA | +/- 20 V | ||||
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576
In-stock
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 10A HiSpd | Through Hole | TO-220-3 | + 175 C | Tube | 115 W | Single | 600 V | 1.5 V | 20 A | 250 nA | +/- 20 V | ||||
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180
In-stock
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IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 85 W | Single | 1200 V | 1.8 V | 20 A | 500 nA | 20 V | ||||
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VIEW | IXYS | IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT | Through Hole | TO-220-3 | + 175 C | Tube | 125 W | Single | 900 V | 2.15 V | 20 A | 100 nA | 30 V | ||||
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VIEW | IXYS | IGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs | Through Hole | TO-220-3 | + 175 C | Tube | 125 W | Single | 900 V | 2.15 V | 20 A | 100 nA | 30 V |