IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG4IBC30WPBF	GET PRICE	PDF RFQ	371 In-stock	Infineon Technologies	IGBT Transistors 600V Warp 60-150kHz	Through Hole	TO-220FP-3	+ 150 C	Tube	45 W	Single	600 V	2.1 V	17 A	100 nA	+/- 20 V
IRG4IBC30UDPBF	GET PRICE	PDF RFQ	209 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 8-60kHz	Through Hole	TO-220FP-3	+ 150 C	Tube	45 W	Single	600 V	1.95 V	17 A	100 nA	+/- 20 V
IRG4IBC30KDPBF	GET PRICE	PDF RFQ	5 In-stock	Infineon Technologies	IGBT Transistors 600V UltraFast 8-25kHz	Through Hole	TO-220FP-3		Tube	45 W	Single	600 V	2.7 V	17 A		+/- 20 V
HGTG10N120BND	GET PRICE	PDF RFQ	203 In-stock	Fairchild Semiconductor	IGBT Transistors 35A 1200V N-Ch	Through Hole	TO-247-3	+ 150 C	Tube	298 W	Single	1200 V	2.45 V	17 A	+/- 250 nA	+/- 20 V

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