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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXXH30N65B4
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RFQ
88
In-stock
IXYS IGBT Transistors 650V/65A Trench IGBT GenX4 XPT Through Hole TO-247AD-3 + 175 C Tube 230 W Single 650 V 1.66 V 65 A 100 nA 20 V
FID60-06D
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RFQ
50
In-stock
IXYS IGBT Transistors 60 Amps 600V Through Hole ISOPLUS i4-PAC-5 + 150 C Tube 200 W Single 600 V 1.6 V 65 A 200 nA +/- 20 V
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