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- Package / Case :
- Gate-Emitter Leakage Current :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
210
In-stock
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onsemi | IGBT Transistors 600V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2.2 V | 70 A | 200 nA | 20 V | ||
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|
GET PRICE |
169
In-stock
|
onsemi | IGBT Transistors 650V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | 20 V | ||
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VIEW | STMicroelectronics | IGBT Transistors 45A 600V Ultra Fast IGBT | Through Hole | TO-247 | Tube | 250 W | 1.9 V | 70 A | 100 nA | 20 V | ||||||
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|
GET PRICE |
6,000
In-stock
|
STMicroelectronics | IGBT Transistors 45A 600V Ultra Fast IGBT | Through Hole | TO-247 | Tube | 250 W | 1.9 V | 70 A | 100 nA | 20 V |
