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Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PH50SPBF
1+
$6.010
10+
$5.110
25+
$5.020
100+
$4.430
RFQ
512
In-stock
IR / Infineon IGBT Transistors 1200V DC-1kHz Through Hole TO-247-3 + 150 C Tube 200 W Single 1.2 kV 1.75 V 57 A 100 nA 20 V
AUIRG4PH50S
GET PRICE
RFQ
19,200
In-stock
Infineon Technologies IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO I... Through Hole TO-247-3   Tube 200 W Single 1.2 kV 1.7 V 57 A   +/- 20 V
IRG4PH50S-EPBF
1+
$5.640
10+
$4.790
25+
$4.710
100+
$4.150
RFQ
250
In-stock
Infineon Technologies IGBT Transistors 1200V DC-1kHz w/ exetended lead Through Hole TO-247AD-3   Tube 200 W Single 1.2 kV 1.7 V 57 A   +/- 20 V
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