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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGWT28IH125DF
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RFQ
232
In-stock
STMicroelectronics IGBT Transistors 1250V 25A trench gte field-stop IGBT Through Hole TO-3P-3 + 175 C Tube 375 W Single 1.25 kV 2.65 V 60 A 250 nA +/- 20 V
STGWT20H60DF
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RFQ
600
In-stock
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop Through Hole TO-3P-3 + 175 C Tube 167 W Single 600 V 2 V 40 A 250 nA 20 V
STGWT30V60F
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RFQ
600
In-stock
STMicroelectronics IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop Through Hole TO-3P-3 + 175 C Tube 260 W Single 600 V 2.3 V 60 A 250 nA 20 V
STGWT20V60F
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RFQ
600
In-stock
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop Through Hole TO-3P-3 + 175 C Tube 167 W Single 600 V 2.3 V 40 A 250 nA 20 V
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