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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRGP4760D-EPBF
1+
$7.540
10+
$6.810
25+
$6.500
100+
$5.640
RFQ
15,000
In-stock
IR / Infineon IGBT Transistors IGBT DISCRETES Through Hole TO-247AD-3 + 175 C Tube 325 W Single 650 V 1.7 V 90 A +/- 100 nA +/- 20 V
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