1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
100
In-stock
|
IR / Infineon | IGBT Transistors IGBT DISCRETES | Through Hole | TO-247-3 | + 175 C | Tube | 469 W | Single | 1.2 kV | 2.1 V | 130 A | +/- 200 nA | +/- 30 V |
