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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG7PSH73K10PBF
1+
$15.360
10+
$14.120
25+
$13.540
50+
$12.800
RFQ
269
In-stock
IR / Infineon IGBT Transistors 1200V 220A SUPER-247 Through Hole TO-274-3 + 175 C Tube 1.15 kW Single 1.2 kV 2 V 220 A 400 nA +/- 30 V
IRG8P60N120KD-EPBF
1+
$10.870
10+
$9.990
25+
$9.580
50+
$9.060
RFQ
33
In-stock
IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AD-3 + 150 C Tube 420 W Single 1200 V 1.7 V 100 A 400 nA 30 V
IRG8P60N120KDPBF
1+
$11.770
10+
$10.640
25+
$10.140
50+
$9.450
RFQ
20
In-stock
IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AC-3 + 150 C Tube 420 W Single 1200 V 1.7 V 100 A 400 nA 30 V
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