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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG8P50N120KD-EPBF
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70
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IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AD-3 + 150 C Tube 350 W Single 1200 V 1.7 V 80 A 300 nA 30 V
IRG8P50N120KDPBF
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RFQ
60
In-stock
IR / Infineon IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AC-3 + 150 C Tube 350 W Single 1200 V 1.7 V 80 A 300 nA 30 V
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