IGBT Transistors - Kaimeite

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5 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXGP24N120C3	GET PRICE	PDF RFQ	84 In-stock	IXYS	IGBT Transistors 24 Amps 1200V	Through Hole	TO-220-3	+ 150 C	Tube	250 W	Single	1.2 kV	3.6 V	48 A	100 nA	+/- 20 V
IXGR24N120C3D1	GET PRICE	PDF RFQ	22 In-stock	IXYS	IGBT Transistors 48 Amps 1200V 2.75 Rds	Through Hole	ISOPLUS 247-3	+ 150 C	Tube	200 W	Single	1.2 kV	3.6 V	48 A	100 nA	+/- 20 V
IXGH24N120C3	GET PRICE	PDF RFQ	35 In-stock	IXYS	IGBT Transistors 48 Amps 1200V	Through Hole	TO-247	+ 150 C	Tube	250 W	Single	1200 V	3.6 V	48 A	100 nA	20 V
APT27GA90BD15	GET PRICE	PDF RFQ	31 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C		223 W	Single	900 V	2.5 V	48 A	100 nA	30 V
IRGP4062-EPBF	GET PRICE	PDF RFQ	250 In-stock	IR / Infineon	IGBT Transistors IR IGBT 600V 600V 24A TO-247AD	Through Hole	TO-247-3		Tube	250 W		600 V	2.04 V	48 A	100 nA	20 V

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