IGBT Transistors - Kaimeite

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6 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
STGW10M65DF2	GET PRICE	PDF RFQ	1,180 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A l...	Through Hole	TO-247-3	+ 175 C		115 W	Single	650 V	1.55 V	20 A	250 uA	+/- 20 V
FPAB30BH60B	GET PRICE	PDF RFQ	2,500 In-stock	Fairchild Semiconductor	IGBT Transistors SPM for Front-End Rectifier;Motion-SPM	Through Hole		+ 125 C	Tube	104 W		600 V		30 A	250 uA
STGF20M65DF2	GET PRICE	PDF RFQ	1,000 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A l...	Through Hole	TO-220FP-3	+ 175 C		32.6 W	Single	650 V	1.55 V	40 A	250 uA	+/- 20 V
STGP20M65DF2	GET PRICE	PDF RFQ	1,000 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A l...	Through Hole	TO-220-3	+ 175 C		166 W	Single	650 V	1.55 V	40 A	250 uA	+/- 20 V
STGWA20M65DF2	GET PRICE	PDF RFQ	600 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A l...	Through Hole	TO-247-3	+ 175 C		166 W	Single	650 V	1.55 V	40 A	250 uA	+/- 20 V
STGB20M65DF2	GET PRICE	PDF RFQ	1,000 In-stock	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A l...	SMD/SMT	D2PAK-3	+ 175 C		166 W	Single	650 V	1.55 V	40 A	250 uA	+/- 20 V

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