1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,180
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A l... | Through Hole | TO-247-3 | + 175 C | 115 W | Single | 650 V | 1.55 V | 20 A | 250 uA | +/- 20 V |
