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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
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Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop RC Through Hole TO-247-3 + 175 C Tube 349 W Single 1350 V 2 V 60 A 100 nA 20 V
IHW30N135R3FKSA1
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265
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Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 349 W Single 1350 V 2 V 60 A 100 nA 20 V
IHW20N135R5
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7,400
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Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop RC Through Hole TO-247-3 + 175 C Tube 288 W Single 1350 V 1.95 V 40 A 100 nA 20 V
IHW40N135R3FKSA1
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240
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Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 429 W Single 1350 V 2 V 80 A 100 nA 20 V
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Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop RC Through Hole TO-247-3 + 175 C Tube 288 W Single 1350 V 1.95 V 40 A 100 nA 20 V
Default Photo
VIEW
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop RC Through Hole TO-247-3 + 175 C Tube 429 W Single 1350 V 2 V 80 A 100 nA 20 V
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