- Manufacture :
- Gate-Emitter Leakage Current :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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501
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 282 W | Single | 650 V | 1.6 V | 80 A | 100 nA | 20 V | ||||
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515
In-stock
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STMicroelectronics | IGBT Transistors 600V 40A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 283 W | Single | 600 V | 1.6 V | 80 A | 250 nA | 20 V | ||||
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258
In-stock
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STMicroelectronics | IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | 20 V | ||||
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276
In-stock
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STMicroelectronics | IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | 20 V | ||||
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206
In-stock
|
Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop 5 | Through Hole | TO-247-3 | + 175 C | Tube | 282 W | Single | 650 V | 1.6 V | 80 A | 100 nA | 20 V | ||||
|
VIEW | STMicroelectronics | IGBT Transistors 600V 60A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | 20 V |