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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IHW50N65R5
1+
$4.160
10+
$3.540
100+
$3.070
250+
$2.910
RFQ
501
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5 Through Hole TO-247-3 + 175 C Tube 282 W Single 650 V 1.6 V 80 A 100 nA 20 V
STGW40H60DLFB
1+
$3.840
10+
$3.270
100+
$2.830
250+
$2.690
RFQ
515
In-stock
STMicroelectronics IGBT Transistors 600V 40A trench gate field-stop IGBT Through Hole TO-247-3 + 175 C Tube 283 W Single 600 V 1.6 V 80 A 250 nA 20 V
STGW60H65FB
1+
$6.550
10+
$5.920
25+
$5.640
100+
$4.900
RFQ
258
In-stock
STMicroelectronics IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT Through Hole TO-247-3 + 175 C Tube 375 W Single 650 V 1.6 V 80 A 250 nA 20 V
STGW40H65FB
1+
$5.670
10+
$4.820
100+
$4.180
250+
$3.960
RFQ
276
In-stock
STMicroelectronics IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT Through Hole TO-247-3 + 175 C Tube 283 W Single 650 V 1.6 V 80 A 250 nA 20 V
Default Photo
1+
$4.160
10+
$3.540
100+
$3.070
250+
$2.910
RFQ
206
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5 Through Hole TO-247-3 + 175 C Tube 282 W Single 650 V 1.6 V 80 A 100 nA 20 V
STGW60H65DFB
600+
$3.110
1200+
$2.630
3000+
$2.430
VIEW
RFQ
STMicroelectronics IGBT Transistors 600V 60A trench gate field-stop IGBT Through Hole TO-247-3 + 175 C Tube 375 W Single 650 V 1.6 V 80 A 250 nA 20 V
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