- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Continuous Collector Current at 25 C :
- Applied Filters :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
1,971
In-stock
|
Fairchild Semiconductor | IGBT Transistors 500mJ, 450V EcoSPARK N-Chan Ignition IGBT | SMD/SMT | D2PAK-3 | + 175 C | Reel | 300 mW | Single | 480 V | 1.25 V | 51 A | 10 V | |||
|
GET PRICE |
38,720
In-stock
|
onsemi | IGBT Transistors EcoSPARK2 300mJ 400V N-Chan Ignition IGBT | SMD/SMT | TO-252 | + 125 C | Reel | 150 W | 400 V | 1.15 V | 23.2 A | 10 V | ||||
|
GET PRICE |
2,214
In-stock
|
Infineon Technologies | IGBT Transistors 430V LOW-VCEON DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 125 W | Single | 430 V | 1.4 V | 20 A | 10 V | |||
|
GET PRICE |
40,000
In-stock
|
Infineon Technologies | IGBT Transistors 430V LO-VCEON DISCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 125 W | Single | 430 V | 1.4 V | 20 A | 10 V | |||
|
GET PRICE |
267
In-stock
|
IR / Infineon | IGBT Transistors 430V Low-Vceon | Through Hole | TO-262-3 | Tube | 125 W | Single | 430 V | 1.4 V | 20 A | 10 V |