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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
3,000
In-stock
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 254 W | Single | 1200 V | 1.8 V | 30 A | 100 nA | 6.4 V | ||
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|
GET PRICE |
3,000
In-stock
|
Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 254 W | Single | 1200 V | 1.8 V | 30 A | 100 nA | 6.4 V |
