IGBT Transistors - Kaimeite

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4 products

PART NO.	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IGW60T120	GET PRICE	PDF RFQ	428 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS IGBT TECH 1200V 60A	Through Hole	TO-247-3	+ 150 C	Tube	375 W	Single	1200 V	2.3 V	100 A	600 nA	5.8 V
IGW60T120FKSA1	GET PRICE	PDF RFQ	217 In-stock	Infineon Technologies	IGBT Transistors LOW LOSS IGBT TECH 1200V 60A	Through Hole	TO-247-3	+ 150 C	Tube	375 W	Single	1200 V	2.3 V	100 A	600 nA	5.8 V
IHW20N135R3	GET PRICE	PDF RFQ	230 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS TrenchStop	Through Hole	TO-247-3	+ 175 C	Tube	310 W	Single	1350 V	1.9 V	40 A	100 nA	5.8 V
IHW20N135R3FKSA1	GET PRICE	PDF RFQ	193 In-stock	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-247-3	+ 175 C	Tube	310 W	Single	1350 V	1.9 V	40 A	100 nA	5.8 V

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