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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IGB10N60T
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1,518
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Infineon Technologies IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech SMD/SMT TO-263-3 + 175 C Reel 110 W Single 600 V 1.8 V 24 A 100 nA 4.6 V
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RFQ
990
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Infineon Technologies IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech SMD/SMT TO-263-3 + 175 C Reel 110 W Single 600 V 1.8 V 24 A 100 nA 4.6 V
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