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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKW75N60H3FKSA1
1+
$6.930
10+
$6.260
25+
$5.970
100+
$5.180
RFQ
457
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 2.25 V 80 A 100 nA 5.7 V
K75T60
1+
$9.400
10+
$8.500
25+
$8.110
100+
$7.040
RFQ
17,800
In-stock
Infineon Technologies IGBT Transistors 600V 75A 100nA Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 80 A 100 nA 5.7 V
IKW60N60H3
1+
$6.500
10+
$5.520
100+
$4.790
250+
$4.540
RFQ
185
In-stock
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop Through Hole TO-247-3 + 175 C Tube 416 W Single 600 V 2.25 V 80 A 100 nA 5.7 V
IKW75N60T
1+
$4.000
10+
$3.500
100+
$3.000
500+
$2.800
1000+
$2.650
RFQ
27,100
In-stock
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 75A Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 80 A 100 nA 5.7 V
IKW75N60H3
240+
$5.180
480+
$4.950
720+
$4.510
1200+
$3.930
VIEW
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 2.25 V 80 A 100 nA 5.7 V
IKW60N60H3FKSA1
240+
$4.790
480+
$4.540
720+
$4.080
1200+
$3.440
VIEW
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop Through Hole TO-247-3 + 175 C Tube 416 W Single 600 V 2.25 V 80 A 100 nA 5.7 V
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