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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGP10NC60KD
1+
$1.150
10+
$0.980
100+
$0.753
500+
$0.666
RFQ
1,385
In-stock
STMicroelectronics IGBT Transistors PowerMESH" IGBT Through Hole TO-220-3 + 150 C Tube 25 W Single 600 V 2 V   100 nA +/- 20 V
IRG4BC20FDPBF
1+
$2.160
10+
$1.840
100+
$1.470
500+
$1.280
RFQ
489
In-stock
Infineon Technologies IGBT Transistors 600V Fast 1-8kHz Through Hole TO-220-3   Tube 60 W Single 600 V 2 V 16 A   +/- 20 V
STGP14NC60KD
1+
$1.530
10+
$1.300
100+
$1.040
500+
$0.911
RFQ
660
In-stock
STMicroelectronics IGBT Transistors PowerMESH" IGBT Through Hole TO-220-3 + 150 C Tube 28 W Single 600 V 2 V 11 A 150 uA +/- 20 V
IRGB5B120KDPBF
1+
$2.780
10+
$2.370
100+
$2.050
250+
$1.940
RFQ
116
In-stock
Infineon Technologies IGBT Transistors 1200V UltraFast 10-30kHz Through Hole TO-220-3   Tube 89 W Single 1.2 kV 2 V 12 A   +/- 20 V
IRG4BC20FPBF
1+
$1.780
10+
$1.510
100+
$1.210
500+
$1.060
RFQ
556
In-stock
Infineon Technologies IGBT Transistors 600V Fast 1-8kHz Through Hole TO-220-3   Tube 60 W Single 600 V 2 V 16 A   +/- 20 V
Default Photo
1+
$2.690
10+
$2.170
100+
$1.740
500+
$1.520
RFQ
5
In-stock
IXYS IGBT Transistors 14 Amps 600V 2.0 Rds Through Hole TO-220-3 + 150 C Tube   Single 600 V 2 V     +/- 20 V
IRGB4045DPBF
1+
$2.280
10+
$1.940
100+
$1.550
500+
$1.360
RFQ
20
In-stock
IR / Infineon IGBT Transistors 600V UltraFast Trench IGBT Through Hole TO-220-3   Tube 77 W Single 600 V 2 V 12 A   +/- 20 V
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