- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,385
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 25 W | Single | 600 V | 2 V | 100 nA | +/- 20 V | |||||
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489
In-stock
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Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-220-3 | Tube | 60 W | Single | 600 V | 2 V | 16 A | +/- 20 V | ||||||
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660
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 28 W | Single | 600 V | 2 V | 11 A | 150 uA | +/- 20 V | ||||
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116
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 10-30kHz | Through Hole | TO-220-3 | Tube | 89 W | Single | 1.2 kV | 2 V | 12 A | +/- 20 V | ||||||
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556
In-stock
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Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-220-3 | Tube | 60 W | Single | 600 V | 2 V | 16 A | +/- 20 V | ||||||
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5
In-stock
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IXYS | IGBT Transistors 14 Amps 600V 2.0 Rds | Through Hole | TO-220-3 | + 150 C | Tube | Single | 600 V | 2 V | +/- 20 V | |||||||
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20
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast Trench IGBT | Through Hole | TO-220-3 | Tube | 77 W | Single | 600 V | 2 V | 12 A | +/- 20 V |