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Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PC50UPBF
1+
$5.220
10+
$4.440
25+
$4.360
100+
$3.850
RFQ
2,410
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-247-3 + 150 C Tube 200 W Single 600 V 2 V 55 A 100 nA 20 V
IRG4PC50UD-EPBF
1+
$7.180
10+
$6.490
25+
$6.190
100+
$5.370
RFQ
93
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-247-3   Tube 200 W Single 600 V 2 V 55 A   +/- 20 V
IRG4PC50UDPBF
1+
$5.020
10+
$4.270
25+
$4.190
100+
$3.700
RFQ
2,150
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-60kHz Through Hole TO-247-3   Tube 200 W Single 600 V 2 V 55 A   +/- 20 V
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