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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
10 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGWT60H65DFB
1+
$5.300
10+
$4.500
100+
$3.910
250+
$3.710
RFQ
974
In-stock
STMicroelectronics IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 375 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
STGWT40H65FB
1+
$4.050
10+
$3.450
100+
$2.990
250+
$2.840
RFQ
1,084
In-stock
STMicroelectronics IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 283 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
STGWT40H60DLFB
1+
$4.050
10+
$3.450
100+
$2.990
250+
$2.840
RFQ
476
In-stock
STMicroelectronics IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 283 W Single 600 V 1.6 V 80 A 250 nA +/- 20 V
STGWT80H65DFB
1+
$7.140
10+
$6.460
25+
$6.160
100+
$5.340
RFQ
72
In-stock
STMicroelectronics IGBT Transistors Trench gate H series 650V 80A HiSpd Through Hole TO-3P + 175 C Tube 469 W Single 650 V 1.6 V 120 A 250 nA +/- 20 V
STGWT60H60DLFB
1+
$5.290
10+
$4.490
25+
$4.420
100+
$3.900
RFQ
573
In-stock
STMicroelectronics IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 375 W Single 600 V 1.6 V 80 A 250 nA +/- 20 V
STGWT60H65FB
1+
$5.290
10+
$4.490
25+
$4.420
100+
$3.900
RFQ
495
In-stock
STMicroelectronics IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 375 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
STGWT40H65DFB
1+
$4.050
10+
$3.440
100+
$2.980
250+
$2.830
RFQ
429
In-stock
STMicroelectronics IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 283 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
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RFQ
Toshiba IGBT Transistors 600V/30A DIS Through Hole TO-3P + 150 C     Single 600 V   30 A   +/- 20 V
STGWT80V60DF
1+
$8.300
10+
$7.500
25+
$7.150
50+
$6.660
RFQ
82
In-stock
STMicroelectronics IGBT Transistors Trench gte FieldStop IGBT 600V 80A Through Hole TO-3P + 175 C Tube 469 W Single 600 V 1.85 V 120 A 250 nA +/- 20 V
STGWT30H65FB
1+
$3.460
10+
$2.940
100+
$2.550
250+
$2.420
RFQ
376
In-stock
STMicroelectronics IGBT Transistors IGBT & Power Bipolar Through Hole TO-3P + 175 C Tube 260 W Single 650 V 1.75 V 30 A 250 nA +/- 20 V
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