- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,084
In-stock
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STMicroelectronics | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
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476
In-stock
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STMicroelectronics | IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
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135
In-stock
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STMicroelectronics | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 600 V | 2.35 V | 80 A | 250 nA | 20 V | ||||
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429
In-stock
|
STMicroelectronics | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | ||||
|
294
In-stock
|
STMicroelectronics | IGBT Transistors 600V 40A High Speed Trench Gate IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 600 V | 2.35 V | 80 A | 250 nA | 20 V |