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Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGWT40H65FB
1+
$4.050
10+
$3.450
100+
$2.990
250+
$2.840
RFQ
1,084
In-stock
STMicroelectronics IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 283 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
STGWT40H60DLFB
1+
$4.050
10+
$3.450
100+
$2.990
250+
$2.840
RFQ
476
In-stock
STMicroelectronics IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 283 W Single 600 V 1.6 V 80 A 250 nA +/- 20 V
STGWT40V60DF
1+
$4.990
10+
$4.010
100+
$3.560
250+
$3.290
RFQ
135
In-stock
STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT Through Hole TO-3P + 175 C Tube 283 W Single 600 V 2.35 V 80 A 250 nA 20 V
STGWT40H65DFB
1+
$4.050
10+
$3.440
100+
$2.980
250+
$2.830
RFQ
429
In-stock
STMicroelectronics IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT Through Hole TO-3P + 175 C Tube 283 W Single 650 V 1.6 V 80 A 250 nA +/- 20 V
STGWT40V60DLF
1+
$4.340
10+
$3.490
100+
$3.100
250+
$2.860
RFQ
294
In-stock
STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT Through Hole TO-3P + 175 C Tube 283 W Single 600 V 2.35 V 80 A 250 nA 20 V
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