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2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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13
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Screw | SOT-227-4 | + 150 C | 329 W | N-Channel | 1.2 kV | 3.3 V | 34 A | 100 nA | +/- 20 V | |||
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36
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Infineon Technologies | IGBT Transistors 1200V 100A GAR CH | Screw | IS4 (34 mm )-5 | + 150 C | 625 W | Single | 1200 V | 2.5 V | 100 A | 400 nA | +/- 20 V |