- Manufacture :
- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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119
In-stock
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IXYS | IGBT Transistors 650V/166A XPT Copacked SOT-227B | SMD/SMT | SOT-227B-4 | + 175 C | Tube | 600 W | Single | 650 V | 1.85 V | 166 A | 100 nA | 30 V | |||
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2,500
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | SMD/SMT | TO-252-3 | + 175 C | Reel | 75 W | Single | 600 V | 1.85 V | 8 A | 100 nA | 20 V | |||
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2,500
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop RC | SMD/SMT | TO-252-3 | + 175 C | Reel | 75 W | Single | 600 V | 1.85 V | 8 A | 100 nA | 20 V | |||
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488
In-stock
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Infineon Technologies | IGBT Transistors 600V Low VCEon | SMD/SMT | TO-263-3 | Tube | 140 W | Single | 600 V | 1.85 V | 42 A | +/- 20 V | |||||
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968
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A ... | SMD/SMT | D2PAK-3 | + 175 C | Reel | 260 W | Single | 600 V | 1.85 V | 60 A | + / - 250 nA | +/- 20 V | |||
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2,500
In-stock
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Infineon Technologies | IGBT Transistors IGBT w/ INTG DIODE 600V 8A | SMD/SMT | TO-252-3 | + 175 C | Reel | 75 W | Single | 600 V | 1.85 V | 8 A | 100 nA | 20 V | |||
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835
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 258 W | Single | 600 V | 1.85 V | 60 A | 250 nA | 20 V |
