- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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2,277
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | DPAK-3 | + 175 C | Reel | 125 W | Single | 390 V | 1.35 V | 625 uA | 16 V | |||||
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42
In-stock
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 200A | SMD/SMT | SOT-227B-4 | + 150 C | Bulk | 830 W | Single | 600 V | 1.35 V | 300 A | 100 nA | +/- 20 V | ||||
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11
In-stock
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IXYS | IGBT Transistors 72 Amps 600V | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 360 W | Single | 600 V | 1.35 V | 160 A | 100 nA | +/- 20 V |