- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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43
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V -50A SMART POWER MODULE | SMD/SMT | SPM32-AA | + 125 C | Tube | 100 W | 2.4 V | 250 nA | ||||||||
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1,661
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V, 3A Short Circuit Rated IGBT | SMD/SMT | TO-252-3 | + 150 C | Reel | 60 W | Single | 600 V | 2.4 V | 6 A | 10 uA | 20 V | ||||
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501
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 20A FSP IGBT | SMD/SMT | D2PAK-3 | + 150 C | Reel | 208 W | Single | 600 V | 2.4 V | 40 A | 400 nA | +/- 20 V | ||||
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646
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 5A NPT IGBT | SMD/SMT | TO-263AB (D2 PAK) | + 150 C | Reel | 73.5 W | Single | 600 V | 2.4 V | 10 A | +/- 10 nA | +/- 20 V | ||||
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86
In-stock
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IXYS | IGBT Transistors 1200V, 12A IGBT; G Series | SMD/SMT | TO-263AA-3 | + 150 C | Tube | 100 W | Single | 1.2 kV | 2.4 V | 22 A | 100 nA | +/- 20 V | ||||
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182
In-stock
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IR / Infineon | IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT | SMD/SMT | DPAK-3 | Tube | 52 W | Single | 600 V | 2.4 V | 7.8 A | +/- 20 V |