- Manufacture :
- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,518
In-stock
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Infineon Technologies | IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech | SMD/SMT | TO-263-3 | + 175 C | Reel | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 4.6 V | ||||
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1,000
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 10A | SMD/SMT | TO-263-3 | + 175 C | Reel | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | ||||
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990
In-stock
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Infineon Technologies | IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech | SMD/SMT | TO-263-3 | + 175 C | Reel | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 4.6 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 10A | SMD/SMT | TO-263-3 | + 175 C | Reel | 110 W | Single | 600 V | 1.8 V | 24 A | 100 nA | 20 V | ||||
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891
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK | + 175 C | Reel | 167 W | Single | 600 V | 1.8 V | 40 A | 250 nA | +/- 20 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 167 W | Single | 600 V | 1.8 V | 40 A | 250 nA | 20 V | ||||
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VIEW | STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK | + 175 C | Reel | 283 W | Single | 600 V | 1.8 V | 80 A | 250 nA | +/- 20 V |