- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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2,312
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A h... | SMD/SMT | DPAK-3 | + 175 C | Reel | 83 W | Single | 600 V | 1.5 V | 10 A | + / - 250 nA | +/- 20 V | ||||
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1,841
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A h... | SMD/SMT | D2PAK-3 | + 175 C | Reel | 88 W | Single | 600 V | 1.5 V | 10 A | + / - 250 nA | +/- 20 V | ||||
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4,996
In-stock
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Littelfuse | IGBT Transistors NGD8201ANT4G GEN4 IGBT | SMD/SMT | DPAK | + 175 C | Reel | 125 W | Single | 440 V | 1.5 V | 20 A | 300 uA | 15 V | ||||
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1,822
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 3 Amp | SMD/SMT | TO-252-3 | + 150 C | Reel | 48 W | Single | 600 V | 1.5 V | 6 A | +/- 100 nA | +/- 20 V | ||||
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2,480
In-stock
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STMicroelectronics | IGBT Transistors Auto 390V IGBT Clamped 300mJ EAS | SMD/SMT | DPAK-3 | + 175 C | Reel | 125 W | Single | 425 V | 1.5 V | 625 uA | 16 V | |||||
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1,438
In-stock
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STMicroelectronics | IGBT Transistors 390V IGBT EAS 300mJ Internally Clamped | SMD/SMT | D2PAK-3 | + 175 C | Reel | 150 W | Single | 425 V | 1.5 V | 625 uA | 16 V | |||||
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227
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK | + 175 C | Reel | 115 W | Single | 600 V | 1.5 V | 20 A | 250 nA | +/- 20 V |