- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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3,200
In-stock
|
IR / Infineon | IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGB... | SMD/SMT | D-PAK-3 | + 150 C | Tube | 60 W | Single | 1.2 kV | 3.17 V | 11 A | +/- 20 V | |||||
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1,600
In-stock
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IR / Infineon | IGBT Transistors 600V LO-VCEON NON PNCH THRU COPCK ... | SMD/SMT | TO-263-3 | + 175 C | Reel | Single | 600 V | 11 A | +/- 20 V | |||||||
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425
In-stock
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IR / Infineon | IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 49 W | Single | 600 V | 1.95 V | 11 A | +/- 20 V | |||||
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800
In-stock
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Infineon Technologies | IGBT Transistors 600V 10A | SMD/SMT | TO-263-3 | + 175 C | Reel | 63 W | Single | 600 V | 11 A | 100 nA | +/- 20 V | |||||
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346
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH ULTRAFAST IGBT | SMD/SMT | DPAK-3 | + 175 C | Tube | 58 W | Single | 600 V | 1.75 V | 11 A | 100 nA | 20 V | ||||
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45
In-stock
|
IR / Infineon | IGBT Transistors 600V TRENCH ULTRAFAST IGBT | SMD/SMT | D-PAK-3 | + 175 C | Tube | 58 W | Single | 600 V | 1.75 V | 11 A | +/- 100 nA | +/- 30 V |