- Package / Case :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
501
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V 20A FSP IGBT | SMD/SMT | D2PAK-3 | + 150 C | Reel | 208 W | Single | 600 V | 2.4 V | 40 A | 400 nA | +/- 20 V | |||
|
|
309
In-stock
|
Infineon Technologies | IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | |||
|
|
1,000
In-stock
|
STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A l... | SMD/SMT | D2PAK-3 | + 175 C | 166 W | Single | 650 V | 1.55 V | 40 A | 250 uA | +/- 20 V | ||||
|
|
891
In-stock
|
STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK | + 175 C | Reel | 167 W | Single | 600 V | 1.8 V | 40 A | 250 nA | +/- 20 V |