- Package / Case :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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939
In-stock
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STMicroelectronics | IGBT Transistors N-Ch Clamped 20 Amp | SMD/SMT | D2PAK-3 | + 150 C | Reel | 200 W | Single | 20 V | 2 V | 40 A | +/- 660 uA | 12 V | |||
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501
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 20A FSP IGBT | SMD/SMT | D2PAK-3 | + 150 C | Reel | 208 W | Single | 600 V | 2.4 V | 40 A | 400 nA | +/- 20 V | |||
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309
In-stock
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Infineon Technologies | IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.05 V | 40 A | 100 nA | +/- 20 V | |||
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630
In-stock
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STMicroelectronics | IGBT Transistors N-Ch Clamped 20 Amp | SMD/SMT | D2PAK-3 | + 150 C | Reel | 200 W | Single | 20 V | 2 V | 40 A | +/- 660 uA | 12 V |