- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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861
In-stock
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STMicroelectronics | IGBT Transistors 60A 650V Field Stop Trench Gate IBGT | SMD/SMT | TO-247 | Tube | 360 W | 650 V | 1.9 V | 120 A | 250 nA | 20 V | ||||||
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4
In-stock
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IXYS | IGBT Transistors 1200V XPT IGBT GenX3 | SMD/SMT | SOT-227B-4 | + 175 C | Tube | 600 W | Single | 1200 V | 2.75 V | 120 A | 100 nA | 30 V |