- Manufacture :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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40
In-stock
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IXYS | IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode | SMD/SMT | TO-263-3 | + 175 C | Tube | Single | 900 V | 2.5 V | 20 A | 100 nA | +/- 20 V | |||||
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5
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | SMD/SMT | TO-263-3 | + 175 C | Tube | 99 W | Single | 600 V | 2 V | 23 A | 100 nA | +/- 20 V | ||||
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37
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH ULTRAFAST IGBT | SMD/SMT | TO-263-3 | + 175 C | Tube | 140 W | Single | 600 V | 1.55 V | 32 A | +/- 100 nA | +/- 30 V |