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- Package / Case :
- Maximum Gate Emitter Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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2,214
In-stock
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Infineon Technologies | IGBT Transistors 430V LOW-VCEON DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 125 W | Single | 430 V | 1.4 V | 20 A | 10 V | ||||
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390
In-stock
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Infineon Technologies | IGBT Transistors 600V DC-1kHz | SMD/SMT | D-PAK-3 | Tube | 60 W | Single | 600 V | 1.4 V | 19 A | +/- 20 V | |||||
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94
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Fairchild Semiconductor | IGBT Transistors 45a 600V N-Ch IGBT UFS Series | SMD/SMT | TO-263AB-3 | + 150 C | Reel | 164 W | Single | 600 V | 1.4 V | 45 A | +/- 250 nA | +/- 20 V |