- Manufacture :
- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,950
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 6 A l... | SMD/SMT | DPAK-3 | + 175 C | Reel | 88 W | Single | 650 V | 1.55 V | 12 A | +/- 250 uA | +/- 20 V | ||||
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1,401
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A... | SMD/SMT | D2PAK-3 | + 175 C | Reel | 260 W | Single | 600 V | 1.55 V | 60 A | + / - 250 nA | +/- 20 V | ||||
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963
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A l... | SMD/SMT | D2PAK-3 | + 175 C | Reel | 136 W | Single | 650 V | 1.55 V | 30 A | + / - 250 uA | +/- 20 V | ||||
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1,000
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A l... | SMD/SMT | D2PAK-3 | + 175 C | 166 W | Single | 650 V | 1.55 V | 40 A | 250 uA | +/- 20 V | |||||
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2,000
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A lo... | SMD/SMT | D2PAK-3 | + 175 C | 88 W | Single | 650 V | 1.55 V | 12 A | +/- 250 uA | +/- 20 V | |||||
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500
In-stock
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A... | SMD/SMT | D2PAK-3 | + 175 C | Reel | 260 W | Single | 600 V | 1.55 V | 60 A | + / - 250 nA | +/- 20 V | ||||
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37
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH ULTRAFAST IGBT | SMD/SMT | TO-263-3 | + 175 C | Tube | 140 W | Single | 600 V | 1.55 V | 32 A | +/- 100 nA | +/- 30 V |