- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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46
In-stock
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IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 95A | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 735 W | Single | 1.7 kV | 2.5 V | 160 A | 200 nA | +/- 20 V | ||||
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482
In-stock
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Infineon Technologies | IGBT Transistors 600V LO-VCEON NON PNCH THRU COPCK ... | SMD/SMT | TO-263-3 | + 150 C | Tube | 63 W | Single | 600 V | 2.5 V | 12 A | +/- 20 V | |||||
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37
In-stock
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IXYS | IGBT Transistors 72 Amps 1700 V 3.3 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 350 W | Single | 1.7 kV | 2.5 V | 75 A | 100 nA | +/- 20 V | ||||
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VIEW | IXYS | IGBT Transistors 75 Amps 1600V 2.5 Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | Single | 1600 V | 2.5 V | +/- 20 V | |||||||
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VIEW | IXYS | IGBT Transistors 24 Amps 1200 V 3.3 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 250 W | Single | 1.7 kV | 2.5 V | 50 A | 100 nA | +/- 20 V | ||||
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VIEW | IXYS | IGBT Transistors 55 Amps 600V 2.5 Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | Single | 600 V | 2.5 V | +/- 20 V | |||||||
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VIEW | IXYS | IGBT Transistors 50 Amps 600V 2.5 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | Single | 600 V | 2.5 V | +/- 20 V |