1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
500
In-stock
|
Infineon Technologies | IGBT Transistors 600V HI SPEED SW IGBT | Through Hole | TO-220-3 FP | + 175 C | Tube | 170 W | Single | 600 V | 1.95 V | 40 A | 100 nA | 20 V |
