- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
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8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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10,144
In-stock
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Fairchild Semiconductor | IGBT Transistors 650 V 80 A 268 W | Through Hole | TO-247 | + 175 C | Tube | 268 W | 650 V | 2.1 V | 80 A | 400 nA | 20 V | |||||
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472
In-stock
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Fairchild Semiconductor | IGBT Transistors 650 V 100 A 240 W | Through Hole | TO-247 | + 175 C | Tube | 240 W | 650 V | 2.1 V | 100 A | 400 nA | 25 V | |||||
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493
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/40A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 349 W | 600 V | 1.9 V | 80 A | 400 nA | 20 V | |||||
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207
In-stock
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Fairchild Semiconductor | IGBT Transistors 1000V 40A Field Stop Trench IGBT | Through Hole | TO-247 | + 175 C | Tube | 333 W | 1000 V | 2.3 V | 80 A | 500 nA | 20 V | |||||
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72
In-stock
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Fairchild Semiconductor | IGBT Transistors N-CH / 40A 600V FS Planar | Through Hole | TO-247 | + 150 C | Tube | 290 W | Single | 600 V | 2.3 V | 80 A | 400 nA | 20 V | ||||
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132
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V 150A 187W | Through Hole | TO-247 | + 175 C | Tube | 187 W | Single | 650 V | 2.3 V | 150 A | 400 nA | 20 V | ||||
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44,000
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 600 W | 600 V | 1.9 V | 120 A | 400 nA | 20 V | |||||
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900
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V, 40A Field Stop IGBT | Through Hole | TO-247 | + 150 C | Tube | 349 W | 2.1 V | 80 A | +/- 400 nA |