- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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61
In-stock
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IXYS | IGBT Transistors 28 Amps 600V | Through Hole | TO-247 | + 150 C | Tube | 190 W | Single | 600 V | 1.5 V | 66 A | +/- 100 nA | |||||
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63
In-stock
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IXYS | IGBT Transistors 36 Amps 600V | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 1.8 V | 200 A | +/- 100 nA | +/- 20 V | ||||
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35
In-stock
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IXYS | IGBT Transistors 48 Amps 1200V | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 1200 V | 3.6 V | 48 A | 100 nA | 20 V | ||||
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VIEW | IXYS | IGBT Transistors High Voltage IGBT w/ Diode | Through Hole | TO-247 | + 150 C | Tube | Single | 1.7 kV | 24 A | +/- 20 V |