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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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28
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IXYS | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | SMD/SMT | SOT-227 | + 150 C | Tube | 750 W | Single | 650 V | 2.1 V | 215 A | 100 nA | 30 V | ||
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134
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Vishay Semiconductors | IGBT Transistors Ic 250A Vce(On)1.10V Sngl Brdge Trench PT | Chassis | SOT-227 | + 150 C | 893 W | Single | 600 V | - | 380 A | +/- 350 nA | 20 V |
