3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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40,000
In-stock
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Infineon Technologies | IGBT Transistors 430V LO-VCEON DISCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 125 W | Single | 430 V | 1.4 V | 20 A | 10 V | |||
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435
In-stock
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Infineon Technologies | IGBT Transistors 600V DC-1kHz | Through Hole | TO-220-3 | + 150 C | Tube | 60 W | Single | 600 V | 1.4 V | 19 A | 100 nA | +/- 20 V | ||
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GET PRICE |
363
In-stock
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Infineon Technologies | IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 1.4 V | 34 A | 100 nA | +/- 20 V |
